? 2013 ixys corporation, all rights reserved IXYH20N120C3D1 v ces = 1200v i c110 = 17a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 3.4v t fi(typ) = 108ns ds100485b(8/13) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab high-speed igbt for 20-50 khz switching symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 1200 v v ge(th) i c = 250 ? a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 125 ? c 350 a i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 20a, v ge = 15v, note 1 3.4 v t j = 150 ? c 4.0 v symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 36 a i c110 t c = 110c 17 a i f110 t c = 110c 20 a i cm t c = 25c, 1ms 88 a i a t c = 25c 10 a e as t c = 25c 400 mj ssoa v ge = 15v, t vj = 150c, r g = 10 ? i cm = 40 a (rbsoa) clamped inductive load @v ce ? v ces p c t c = 25c 230 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g 1200v xpt tm igbt genx3 tm w/ diode features ? optimized for low switching losses ? square rbsoa ? positive thermal coefficient of vce(sat) ? anti-parallel ultra fast diode ? avalanche rated ? international standard package advantages ? high power density ? low gate drive requirement applications ? high frequency power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts
ixys reserves the right to change limits, test conditions, and dimensions. IXYH20N120C3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 e ?? p to-247 (ixyh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitter dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 20a, v ce = 10v, note 1 7.0 11.5 s c ie s 1110 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 120 pf c res 27 pf q g(on) 53 nc q ge i c = 20a, v ge = 15v, v ce = 0.5 ? v ces 9 nc q gc 22 nc t d(on) 20 ns t ri 29 ns e on 1.3 mj t d(off) 90 ns t fi 108 ns e of f 0.5 1.0 mj t d(on) 20 ns t ri 40 ns e on 3.7 mj t d(off) 115 ns t fi 105 ns e off 0.7 mj r thjc 0.54 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 20a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 inductive load, t j = 150c i c = 20a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . (t j = 25c, unless otherwise specified) characteristic value symbol test conditions min. typ. max. v f 3.00 v t j = 150c 1.75 v i rm 9 a t rr 195 ns r thjc 0.90 c/w i f = 30a,v ge = 0v, -di f /dt = 100a/ s, t j = 100c v r = 600v t j = 100c i f = 30a,v ge = 0v, note 1 reverse diode (fred)
? 2013 ixys corporation, all rights reserved IXYH20N120C3D1 fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 00.511.522.533.544.555.56 v ce - volts i c - amperes v ge = 15v 13v 11v 10v 7v 9v 6v 8v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 12v 9v 13v 10v 7v 11v 6v 8v fig. 3. output characteristics @ t j = 150oc 0 5 10 15 20 25 30 35 40 012345678 v ce - volts i c - amperes 7v 6v 9v 8v v ge = 15v 13v 11v 10v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 20a i c = 10a i c = 40a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 3 5 7 9 11 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 40a t j = 25oc 10a 20a fig. 6. input admittance 0 5 10 15 20 25 30 35 40 45 50 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 v ge - volts i c - amperes t j = - 40oc 25oc 150oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH20N120C3D1 fig. 11. maximum transient thermal impedance (igbt) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 200 400 600 800 1000 1200 v ce - volts i c - amperes t j = 150oc r g = 10 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 55 q g - nanocoulombs v ge - volts v ce = 600v i c = 20a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res
? 2013 ixys corporation, all rights reserved IXYH20N120C3D1 fig. 12. inductive switching energy loss vs. gate resistance 0 0.4 0.8 1.2 1.6 2 10 15 20 25 30 35 40 45 50 55 r g - ohms e off - millijoules 0 4 8 12 16 20 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 600v i c = 20a i c = 40a fig. 15. inductive turn-off switching times vs. gate resistance 20 40 60 80 100 120 140 160 180 10 15 20 25 30 35 40 45 50 55 r g - ohms t f i - nanoseconds 40 80 120 160 200 240 280 320 360 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 600v i c = 20a i c = 40a fig. 13. inductive switching energy loss vs. collector current 0.2 0.4 0.6 0.8 1.0 1.2 1.4 20 22 24 26 28 30 32 34 36 38 40 i c - amperes e off - millijoules 0 2 4 6 8 10 12 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 600v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 2 4 6 8 10 12 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 600v i c = 20a i c = 40a fig. 16. inductive turn-off switching times vs. collector current 20 40 60 80 100 120 140 20 22 24 26 28 30 32 34 36 38 40 i c - amperes t f i - nanoseconds 70 80 90 100 110 120 130 t d(off) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 600v t j = 25oc t j = 150oc fig. 17. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 160 25 50 75 100 125 150 t j - degrees centigrade t f i - nanosecond s 70 80 90 100 110 120 130 140 t d(off) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 600v i c = 20a i c = 40a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH20N120C3D1 ixys ref: ixy_20n120c3(4l) 9-06-13-c fig. 19. inductive turn-on switching times vs. collector current 0 40 80 120 160 200 20 22 24 26 28 30 32 34 36 38 40 i c - amperes t r i - nanoseconds 19 20 21 22 23 24 t d(on) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 600v t j = 25oc t j = 150oc fig. 20. inductive turn-on switching times vs. junction temperature 0 40 80 120 160 200 25 50 75 100 125 150 t j - degrees centigrade t r i - nanosecond s 17 19 21 23 25 27 t d(on) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 600v i c = 40a i c = 20a fig. 18. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 280 10 15 20 25 30 35 40 45 50 55 r g - ohms t r i - nanosecond s 15 20 25 30 35 40 45 50 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 600v i c = 20a i c = 40a fig. 21. maximum peak load current vs. frequency 0 10 20 30 40 50 60 70 80 0.1 1 10 100 1000 f max - kilohertzs i c - amperes t j = 150oc t c = 75oc v ce = 600v v ge = 15v r g = 10 ? d = 0.5 square wave triangular wave fig. 22. maximum transient thermal impedance (diode) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2013 ixys corporation, all rights reserved IXYH20N120C3D1 fig. 23. forward current i f vs v f 0 10 20 30 40 50 60 70 00.511.522.533.54 v f [v] i f [a] 25oc t vj = 150oc 100oc fig. 24. reverse recovery charge q rm vs. -di f /dt 0 1 2 3 4 5 100 1000 -di f /dt [a/s] q rm [c] t vj = 100oc v r = 600v i f = 60a 15a 30a 500 fig. 25. peak reverse current i rm vs. -di f /dt 0 10 20 30 40 50 60 0 200 400 600 800 1000 -di f /dt [a/s] i rm [a] t vj = 100oc v r = 600v i f = 60a, 30a, 15a fig. 26. dynamic parameters q rm , i rm vs. t vj 0 0.5 1 1.5 2 20 40 60 80 100 120 140 160 t vj [oc] i rm & q rm [normalized] i rm q rm fig. 27. recovery time t rr vs. -di f /dt 120 140 160 180 200 220 0 200 400 600 800 1000 -di f /dt [a/s] t rr [ns] t vj = 100oc v r = 600v i f = 60a 30a 15a fig. 28. peak forward voltage v fr , t rr vs -di f /dt 0 20 40 60 80 100 120 0 100 200 300 400 500 600 700 800 900 1000 -di f /dt [a/s] v fr [v] 0 0.2 0.4 0.6 0.8 1 1.2 t rr [s] t rr t vj = 100oc i f = 30a v fr
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